Solid state image sensor

Details Solid state image sensor Solid state image sensor

1995-07-26

1997-08-26

Fahmy, Wael

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Charge transfer device

257226, 257232, 257257, 257259, H01L 27148, H01L 29768

Patent

active

056613172

ABSTRACT:
Solid state image sensor which can improve photic sensitivity of photodiodes by providing only one transmission line between the photodiodes, leading to reduction of width of the transmission line passing between the photodiodes, including a substrate, photodiodes formed on the substrate, a first to a fourth transmission gates arranged in sequence by four for every two photodiodes on a part of the substrate on one side of each of the photodiode, a first, and a second transmission lines arranged one by one alternatively extended at length on the substrate between adjacent photodiodes connected to the first, and the second transmission gates respectively for applying a first, and a second driving clock signals, respectively, a first contact formed at the third transmission gate, a second contact formed at the fourth transmission gate, and a third, and a fourth transmission lines formed over the transmission gates in parallel at length connected through the third, and the fourth transmission gates and the first, and second contacts respectively for applying a third, and a fourth driving clock signals, respectively.

REFERENCES:
patent: 5210433 (1993-05-01), Oshawa et al.
patent: 5506429 (1996-04-01), Tanaka et al.

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