Method of forming p-type silicon carbide

Details Method of forming p-type silicon carbide Method of forming p-type silicon carbide

1993-05-28

1994-11-22

Lewis, Michael

Chemistry of inorganic compounds

Silicon or compound thereof

Binary compound

423345, 437100, C01B 3136

Patent

active

053667131

ABSTRACT:
A method of forming p-type silicon carbide which comprises using reactive source gases comprising silane, hydrogen, trimethylboron, and either diborane or boron trifluoride, to thereby attain a widened band gap by the action of the carbon contained in the trimethylboron.

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