Method of producing a semiconductor device

Details Method of producing a semiconductor device Method of producing a semiconductor device

1983-12-23

1986-09-16

Hearn, Brian E.

Metal working

Method of mechanical manufacture

Assembling or joining

29571, 29578, 148 15, 148175, 357 40, 357 49, 357 50, 357 55, H01L 2176, H01L 21308

Patent

active

046113860

ABSTRACT:
A method of producing a semiconductor device having an isolation region between elements. Each element is surrounded by a field oxide film, and is isolated by the dielectric isolation structure of a groove filled with an insulating material. The field oxide film is formed by selectively oxidizing an epitaxial layer, and the groove extending through the epitaxial layer and a buried layer is formed after the oxidation of the epitaxial layer. After the surface of the groove is covered with an insulating film, e.g., a thermal oxide film created by oxidizing the surface, the groove is filled with insulating filler material.

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patent: 4420874 (1983-12-01), Funatsu
patent: 4449287 (1984-05-01), Maas et al.
patent: 4455740 (1984-06-01), Iwai

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