Method of making junction field effect transistor of static indu

Details Method of making junction field effect transistor of static indu Method of making junction field effect transistor of static indu

1985-04-30

1986-09-16

Roy, Upendra

Metal working

Method of mechanical manufacture

Assembling or joining

29576B, 29578, 29580, 148 15, 148175, 148187, 148DIG82, 357 22, 357 91, H01L 21265, H01L 2138, H01L 21425

Patent

active

046113843

ABSTRACT:
Junction field effect transistor, specifically a static induction transistor, and method of fabricating. An epitaxial layer of high resistivity N-type silicon is grown on a substrate of low resistivity silicon. The surface of the epitaxial layer is coated with silicon nitride, portions of the silicon nitride are removed, and the silicon is etched to form parallel grooves with interposed ridges of silicon. A layer of silicon nitride is applied and then removed except from the side walls of the grooves. Exposed silicon at the bottoms of the grooves is converted to silicon dioxide to build up layers of silicon dioxide in the grooves. The remaining silicon nitride is removed. P-type conductivity imparting material is ion implanted into alternate (gate) ridges and diffused to form gate regions which extend laterally beneath the silicon dioxide in the adjacent grooves. N-type conductivity imparting material is ion implanted in the top of the intervening (source) ridges. Metal contacts are applied to the gate ridges, the source ridges, and the substrate.

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