Method of manufacturing a perforated workpiece

Details Method of manufacturing a perforated workpiece Method of manufacturing a perforated workpiece

1993-01-21

1993-11-16

Tufariello, T. M.

Chemistry: electrical and wave energy

Processes and products

Electrostatic field or electrical discharge

20412965, C25F 314

Patent

active

052620212

ABSTRACT:
A method of forming holes extending perpendicular to a first surface of a workpiece comprises providing the substrate wafer of n-doped, single-crystal silicon, and then electrochemically etching the substrate wafer to form a structured layer having the desired perforations. The electrochemical etching particularly occurs in a fluoride-containing electrolyte, and the substrate wafer is connected as an electrode. If the process parameters are maintained, the electrochemical etching will produce holes having a constant, substantially uniform cross section. However, varying the process parameters can cause changes in the cross section of the hole adjacent a base of the hole so that it is possible to enlarge the hole to facilitate stripping the workpiece as a lamina from the substrate.

REFERENCES:
patent: 4874484 (1989-10-01), Foell

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