Method of forming a capacitor having container members

Details Method of forming a capacitor having container members Method of forming a capacitor having container members

1995-11-13

1997-08-26

Tsai, Jey

Semiconductor device manufacturing: process

Making passive device

Stacked capacitor

438397, H01L 218242

Patent

active

056610645

ABSTRACT:
A capacitor construction includes, a) first and second electrically conductive capacitor plates separated by an intervening capacitor dielectric layer, the first capacitor plate comprising first and second container members, the second container member being received inside of the first container member, the first and second container members comprising a respective ring portion and a respective base portion; and b) a pedestal disk positioned elevationally intermediate the first container member base and the second container member base to space and support the second container member relative to the first container member. The structure is preferably produced by using a series of alternating first and second layers of semiconductive material provided over a molding layer within a container contact opening therein. One of the first and second layers has an average conductivity enhancing dopant concentration of greater than about 5.times.10.sup.19 ions/cm.sup.3, with the other of the first and second layers having an average conductivity enhancing dopant concentration from 0 ions/cm.sup.3 to about 5.times.10.sup.19 ions/cm.sup.3. At least one of the first and second layers is selectively etchable relative to the other of the first and second layers to facilitate a container construction and formation of the pedestal disk. Utilization of alternate materials to the doped semiconductive material is also contemplated.

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