Process for the production of semiconductor devices utilizing mu

Details Process for the production of semiconductor devices utilizing mu Process for the production of semiconductor devices utilizing mu

1987-07-15

1991-08-06

Saba, William G.

Fishing, trapping, and vermin destroying

148DIG17, 148DIG25, 148DIG150, 156603, 156612, 156613, 156614, 437 84, 437 85, 437 90, 437101, 437108, 437112, 437243, 437247, H01L 2120, H01L 21324, H01L 2184

Patent

active

050377744

ABSTRACT:
Process for the production of semiconductor devices by using silicon-on-insulator (SOI) techniques. The Si layers of the SOI structure include an interfacial layer of Si and a buffer layer of Si formed thereon, whereby the formation of stacking faults in the Si layers can be effectively prevented. Pretreatment of the underlying insulating material with a molybdate solution and interposition of an additional layer of slowly grown single-crystalline Si between the buffer layer of Si and the overlying active Si layer are also effective to inhibit the stacking faults. Semiconductor devices with high quality can be produced with good yield.

REFERENCES:
patent: 3655439 (1972-04-01), Seiter
patent: 3862859 (1975-01-01), Ettenberg et al.
patent: 4147584 (1979-04-01), Garrison et al.
patent: 4279688 (1981-07-01), Abrahams et al.
patent: 4381201 (1983-04-01), Sakurai
patent: 4448632 (1984-05-01), Akasaka
Hokari et al. "Characteristics - - - Si/MgO.Al.sub.2 Ohd 3/SiO.sub.2 /Si - - - ".
Fan et al., "Crystallization of Amorphous Silicon-Laser Heating" Applied Physics Letters, vol. 27, No. 4, Aug. 15, 1975, pp. 224-226.

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