Stacked capacitor doping technique making use of rugged polysili

Details Stacked capacitor doping technique making use of rugged polysili Stacked capacitor doping technique making use of rugged polysili

1990-11-08

1991-08-06

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437164, 437919, 437977, 148DIG133, H01L 2172

Patent

active

050377736

ABSTRACT:
A technique for effectively doping a storage node capacitor plate constructed from low temperature deposited rugged polysilicon. A phosphorus silica glass is deposited prior polysilicon deposition and used primarily to uniformly diffuse n-type dopants into the subsequently deposited rugged poly capacitor plate. This doping technique eliminates the need for high temperature doping and will maintain the rugged surface in the poly of the capacitor plate.

REFERENCES:
patent: 4536950 (1985-08-01), Sadamatsu et al.
patent: 4549914 (1985-10-01), Oh
patent: 4742018 (1988-05-01), Kimura et al.
patent: 4874716 (1989-10-01), Rao
"Chemically Vapor-Deposited Borophosphosilicate Glasses for Silicon Device Applications", RCA Review, vol. 43, Sep. 1982, pp. 423-457, by Werner Kern and George L. Schnable.

Affiliated with

Also associated with

Rating

Stacked capacitor doping technique making use of rugged polysili does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Stacked capacitor doping technique making use of rugged polysili, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Stacked capacitor doping technique making use of rugged polysili will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1986812