Plasma clean with hydrogen gas

Details Plasma clean with hydrogen gas Plasma clean with hydrogen gas

1996-03-14

1997-08-26

Breneman, R. Bruce

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

134 12, 438723, 438725, H01L 21461

Patent

active

056606826

ABSTRACT:
A method of removing material from an integrated circuit. The integrated circuit is placed within a reaction chamber, and a flow of argon and a flow of hydrogen are introduced into the reaction chamber, where the flow of hydrogen is greater than the flow of argon. The flows of argon and hydrogen are energized to form a plasma, and the material is removed from the integrated circuit by reaction of the material with the energized flows of argon and hydrogen to form gaseous products, which are pumped out of the reaction chamber. The plasma and flows of argon and hydrogen are discontinued when a desired amount of material has been removed, and the integrated circuit is removed from the reaction chamber.

REFERENCES:
patent: 4357203 (1982-11-01), Zelez
patent: 5000819 (1991-03-01), Pedder
patent: 5089441 (1992-02-01), Moslehi
patent: 5432073 (1995-07-01), Wu et al.
"Low Temperature In Situ Surface Cleaning of Oxide-Patterned Wafers By Argon/Hydrogen Plasma Sputter"; Yew et al.; J. Appl Phys, (1990'); 68 (9); pp. 4681-4693.
"Low Temperature In Situ Cleaning of Silicon Wafers With An Ultrahigh Vacuum Compatible Plasma Source"; Ram et al., pp. 126-131; 1992; Thin Solid Films, 222 (1-2).

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