Semiconductor device having high aspect ratio contacts

Details Semiconductor device having high aspect ratio contacts Semiconductor device having high aspect ratio contacts

1998-04-13

2000-10-03

Hardy, David

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257548, 257616, 257763, 257770, 257774, 257775, H01C 2348

Patent

active

061277320

ABSTRACT:
Impurities are added to a conductor layer in a semiconductor process to prevent formation of void spaces and encourage complete filling of contacts. The impurities reduce the melting point and surface tension of a conductor layer, thereby improving filling characteristics during a reflow step. The impurities may be added at any time during the process, including during conductor deposition and/or reflow.

REFERENCES:
patent: 4811067 (1989-03-01), Fitzgerald et al.
patent: 4985750 (1991-01-01), Hoshino
patent: 5293053 (1994-03-01), Malhi et al.
patent: 5324973 (1994-06-01), Sivan
patent: 5691571 (1997-11-01), Hirose et al.
patent: 5719446 (1998-02-01), Taguchi et al.
patent: 5751064 (1998-05-01), Bryant et al.
patent: 5773890 (1998-06-01), Uchiyama et al.
patent: 5786637 (1998-07-01), Tabara
patent: 5831335 (1998-11-01), Miyamoto
patent: 5856706 (1999-01-01), Lee
patent: 5869902 (1999-02-01), Lee et al.
patent: 5939788 (1999-08-01), McTeer

Affiliated with

Also associated with

Rating

Semiconductor device having high aspect ratio contacts does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device having high aspect ratio contacts, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device having high aspect ratio contacts will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-198535