Method for making a deep diode magnetoresistor

Details Method for making a deep diode magnetoresistor Method for making a deep diode magnetoresistor

1978-12-22

1979-09-25

Ozaki, G.

Metal treatment

Compositions

Heat treating

29571, 148 33, 148177, 148188, H01L 21225

Patent

active

041689917

ABSTRACT:
Thermal gradient zone melting (TGZM) is employed to make a semiconductor magnetoresistor device embodying a plurality of spaced highly conductive planar metallic-like electrodes formed in situ by TGZM to maximize the increase in the current path in a magnetic field established in the device.

REFERENCES:
patent: 3898106 (1973-10-01), Cline et al.
patent: 3899361 (1975-08-01), Cline et al.
patent: 3899362 (1975-08-01), Cline et al.
patent: 3901736 (1975-08-01), Anthony et al.
patent: 3902925 (1975-09-01), Anthony et al.
patent: 3988763 (1976-10-01), Torreno

Affiliated with

Also associated with

Rating

Method for making a deep diode magnetoresistor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for making a deep diode magnetoresistor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for making a deep diode magnetoresistor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1985058