Method for producing semiconductor device and photodetector devi

Details Method for producing semiconductor device and photodetector devi Method for producing semiconductor device and photodetector devi

1998-09-30

2000-10-03

Loke, Steven H.

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

257433, 257458, 257452, 257461, 257462, 257618, 257620, 257290, 257291, 438113, 438458, 438462, 438 48, 2502081, 25020814, H01L 3100

Patent

active

061277142

ABSTRACT:
A large-area semiconductor device formed by adhering substrates, which is free from damages on the elements provided on each substrate during transportation thereof, also free from loss in the production yield and the uniformity of performance, thereby achieving a low cost and a high quality, can be realized by carrying out full-cutting in a substantially vertical direction of each substrate at an end surface on a side of the substrates to be mutually opposed to one another to detach an unnecessary portion, carrying out half-cutting on at least one end surface on a side other than the side to be opposed to merely form a groove between an unnecessary portion and the substrate to leave the unnecessary portion in a connected state, and arranging thus cut substrates so that the full-cutting end surfaces thereof are mutually opposed.

REFERENCES:
patent: 5777335 (1998-07-01), Mochizuki et al.
patent: 5811790 (1998-09-01), Endo et al.
patent: 5856699 (1999-01-01), Hayashi et al.

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