Optically isolated laser diode array

Details Optically isolated laser diode array Optically isolated laser diode array

1991-09-03

1993-05-04

Hearn, Brian E.

Coherent light generators

Particular active media

Semiconductor

437129, H01S 319, H01L 2120

Patent

active

052088235

ABSTRACT:
An optically isolated laser diode array is formed by growing a quantum well layer on a substrate after a plurality of strips are placed on the substrate. As the lattice of the quantum well of layer grows over the strips, it deforms the lattice structure of such layer causing it to be optically lossy in the regions above the strips. An insulative layer may then be deposited on the quantum well layer and patterned so that electrical contact may be made to the quantum well layer active regions which are disposed between each of the strips. In these active regions, the quantum well layer lattice structure is well formed to provide high quality active regions for laser diodes.

REFERENCES:
patent: 4371968 (1983-02-01), Trussell, Jr. et al.
patent: 4577321 (1986-03-01), Carney et al.
patent: 4674095 (1987-06-01), Heinen et al.
patent: 4712220 (1987-12-01), Luft
patent: 4803691 (1989-02-01), Scifres et al.
patent: 4831629 (1989-05-01), Paoli et al.
patent: 4870652 (1989-09-01), Thornton
patent: 4871690 (1989-10-01), Holonyak, Jr. et al.
patent: 4878223 (1989-10-01), Morimoto et al.
patent: 5108948 (1992-04-01), Murakami et al.
patent: 5124279 (1992-06-01), Goto

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