Semiconductor element having opposite signs of .alpha. parameter

Details Semiconductor element having opposite signs of .alpha. parameter Semiconductor element having opposite signs of .alpha. parameter

1991-07-18

1993-05-04

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

372 26, 372 46, 372 96, H01S 319

Patent

active

052088227

ABSTRACT:
A semiconductor optical element comprises a semiconductor substrate, a waveguide, an active layer and a clad layer mounted on said substrate; said active layer comprising first region and second region coupled optically with each other, and having opposite signs of .alpha. parameters with each other, where said parameter is ratio of change of refractive index to change of gain following change of carrier density; a first electrode common to all regions attached on one side of said substrate; and second electrodes for each region attached on the other side of said substrate. The invention is used for an AM modulation laser, or an FM modulation laser.

REFERENCES:
patent: 4847856 (1989-07-01), Sugimura et al.
patent: 5060235 (1991-10-01), Ikeda

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