Optical modulator based on gamma -X valley mixing in GaAs-AlAs

Details Optical modulator based on gamma -X valley mixing in GaAs-AlAs Optical modulator based on gamma -X valley mixing in GaAs-AlAs

1991-09-20

1993-05-04

Arnold, Bruce Y.

Optical: systems and elements

Optical modulator

Light wave temporal modulation

257431, 257 12, G02F 103, H01L 29161, H01L 2714

Patent

active

052086950

ABSTRACT:
An optic modulator having a multiple quantum well structure which is fabrted of alternating layers of gallium arsenide and aluminum arsenide such that at zero electric field there is an indirect electron-hole transition between valence and conduction bands of the aluminum arsenide layers and gallium arsenide layers, respectively, and a direct electron-hole transition between the valence and conduction bands of the gallium arsenide wells. At zero field the multiple quantum well behaves much like bulk material due to the matching of the band gap energy levels of the gallium arsenide and aluminum arsenide. However, when a sufficient electric field is applied to the structure the energy levels decouple thereby modulating the wavelength of any light passing through the structure.

REFERENCES:
patent: 5093695 (1992-03-01), Cunningham et al.

Affiliated with

Also associated with

Rating

Optical modulator based on gamma -X valley mixing in GaAs-AlAs does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Optical modulator based on gamma -X valley mixing in GaAs-AlAs, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Optical modulator based on gamma -X valley mixing in GaAs-AlAs will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1978965