Test method for predicting hot-carrier induced leakage over time

Details Test method for predicting hot-carrier induced leakage over time Test method for predicting hot-carrier induced leakage over time

1995-05-16

1997-02-25

Teska, Kevin J.

Boots, shoes, and leggings

364488, 364489, 364483, G01R 19145, G01R 3128

Patent

active

056065183

ABSTRACT:
A test method and apparatus are provided for predicting hot-carrier induced leakage over time in IGFET's. Test results are used to show how choice of channel length and stress voltages critically affect hot-carrier-induced leakage (HCIL) leakage over time, particularly in devices having submicron channel lengths. Models are developed for predicting leakage current over the long term given short term test results. Alternative design strategies are proposed for reliably satisfying long term leakage requirements.

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Fang et al., "Hot Carrier Induced Off State Current Leakage in Submicrometer, PMOSFET Devices," IEEE, 1994, pp. 463-465.

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