Resistive gate magnetic field sensor

Details Resistive gate magnetic field sensor Resistive gate magnetic field sensor

1990-12-31

1993-05-04

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Magnetic field

257427, H01L 2722

Patent

active

052084779

ABSTRACT:
A FET device for sensing a magnetic field, the FET device comprising: a semiconductor material having a source at a first position therein and receiving means at a second position therein for receiving charge carriers; bias voltage means for providing a bias voltage between the source and the receiving means to produce a movement of charge carriers between the source and the receiving means; a channel layer disposed within the semiconductor material between the source and the receiving means through which the charge carriers move as a function of the bias voltage and the magnetic field being sensed; a resistive gate disposed between the source and the receiving means and above the channel layer; a first resistive gate contact disposed in a first preselected position with respect to the source; a second resistive gate contact disposed in a second preselected position with respect to the receiving means; a resistive gate voltage means for providing a resistive gate bias voltage between the first and second resistive gate contacts to establish a longitudinal electric field in the channel layer; and output means disposed in the semiconductor material for providing a signal related to the strength of the magnetic field sensed by the FET device.

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