Semiconductor device having Al-Cu wiring lines where Cu concentr

Details Semiconductor device having Al-Cu wiring lines where Cu concentr Semiconductor device having Al-Cu wiring lines where Cu concentr

1995-06-07

1997-02-25

Jackson, Jr., Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257767, 257762, H01L 2348

Patent

active

056062036

ABSTRACT:
A semiconductor device that includes a wiring line formed from an electrode wiring layer which uses, as an electrode material, an Al alloy containing Cu, wherein wiring line having a size smaller than a crystal grain diameter has a Cu concentration of 0.05 to 0.3 wt %, and a wiring line having a size larger than a crystal grain diameter has a Cu concentration of 0.5 to 10 wt %.

REFERENCES:
patent: 3716469 (1973-02-01), Bhatt et al.
patent: 3743894 (1973-07-01), Hall et al.
patent: 4352239 (1982-10-01), Pierce
patent: 4438450 (1984-03-01), Sheng et al.
patent: 4924290 (1990-05-01), Enkaku et al.
patent: 5071714 (1991-12-01), Rodbell et al.
patent: 5300307 (1994-04-01), Frear et al.
Scoggan et al., "Width Dependence of Electromigration Life in Al-Cu, Al-Cu-Si and Ag Conductors," Reliability Physics, Apr. 1975, pp. 51-158.
Kwok, "Effect of Grain Growth and Grain Structure on Electromigration Lifetime in Al-Cu Submicron Interconects," Proc. of Fourth Int'l. IEEE VLSI Mutilevel Interconnection Conference, Jun. 1987, pp. 456-462.

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