Semiconductor integrated circuit including opposed substrates of

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device

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257777, 257 67, 257200, 257146, 257278, 257508, 257565, H01L 2978, H01L 2706, H01L 2708, H01L 2700

Patent

active

056061862

ABSTRACT:
An insulating film having a through hole aligned with an electrode on a first semiconductor element is formed on a first semiconductor substrate and a metal is disposed in the through hole. A second semiconductor element on a second semiconductor substrate is placed on the insulating film in such a way that an electrode of the second semiconductor element contacts the metal. Thus, a plurality of transistors having different performance characteristics and functions can be easily disposed adjacent to each other for improved integration.

REFERENCES:
patent: 4122479 (1978-10-01), Sugawara et al.
patent: 4614960 (1986-09-01), Bluzer
patent: 4889824 (1989-12-01), Selle et al.
patent: 5041884 (1991-08-01), Kumamoto et al.
patent: 5168338 (1992-12-01), Kumada et al.
patent: 5521401 (1996-05-01), Zamanian et al.

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