Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Patent
1994-09-26
1997-02-25
Crane, Sara W.
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
257 20, 257 21, 257 94, 372 43, H01L 2906, H01L 310328, H01L 310336
Patent
active
056061765
ABSTRACT:
A strained quantum well structure comprises a substrate, and a strained quantum well. The strained quantum well has at least one well layer and a plurality of barrier layers. The well layer is sandwiched by the barrier layers. At least a portion of the well layer and the barrier layers is composed of semiconductor crystal whose amount of strain is distributed, and the band structure of the quantum well is constructed so that the transition in the quantum well layer can be exchanged between states in which first polarization-state, typically transverse electric, transition is dominant and in which second polarization-state, typically transverse magnetic, transition is dominant.
REFERENCES:
patent: 5079774 (1992-01-01), Mendez et al.
patent: 5090790 (1992-02-01), Zucker
patent: 5313073 (1994-05-01), Kuroda et al.
patent: 5339325 (1994-08-01), Kito et al.
patent: 5349201 (1994-09-01), Stanchina et al.
patent: 5383211 (1995-01-01), Van De Walle et al.
"A Field-Effect Quantum Well Laser With Lateral Current Injection", D. Ahn et al., Journal of Applied Physics, vol. 64, No. 1, Jul. 1988, New York, US, pp. 440-442.
"Strained-Layer InGaAs Multiple Quantum Well Lasers Emitting at 1.5 Micron Wavelength", P. J. A.: Thijs et al., Japanese Journal of Applied Physics, Supplements, Extended Abstracts 22th Conf. on Solid State Devices and Materials (1990), Tokyo, Japan, Aug. 1990, pp. 541-544.
"Graded InGaAs/GaAs Strained Layer Quantum Well Laser", T-K Yoo et al., Applied Physics Letters, vol. 62, No. 18, May 1993, New York US, pp. 2239-2241.
"Quantum-Confined Field-Effect Light Emitters: Device Physics and Experiments", M. Okuda, et al., IEEE Journal of Quantum Electronics, vol. 26, No. 9, Sep. 1990.
Hidenako Tanaka, et al., "TE/TM mode switching of GaAsP strained quantum-well laser diodes", SPIE Laser Diode Technology and Applications V, vol. 1850, 1993, pp. 145-152.
Canon Kabushiki Kaisha
Crane Sara W.
LandOfFree
Strained quantum well structure having variable polarization dep does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Strained quantum well structure having variable polarization dep, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Strained quantum well structure having variable polarization dep will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1975836