Integrated circuitry having a thin film polysilicon layer in ohm

Details Integrated circuitry having a thin film polysilicon layer in ohm Integrated circuitry having a thin film polysilicon layer in ohm

1995-05-22

1996-11-26

Limanek, Robert P.

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257903, 257 66, 257 69, 257382, H01L 2904, H01L 2711, H01L 2954

Patent

active

055788734

ABSTRACT:
An integrated circuit includes: a) a semiconductor substrate; b) a first conductivity type substrate diffusion region within the semiconductor substrate, the first conductivity type substrate diffusion region being electrically conductive and having an outer first total area; c) a thin film polysilicon layer of the first conductivity type overlying and being in ohmic electrical connection with the substrate diffusion region; and d) a pillar of electrically conductive material extending outwardly from the thin film polysilicon layer over the electrically conductive diffusion region, the pillar having a total cross sectional second area where the pillar joins the thin film polysilicon layer, the second area being less than the first area and being received entirely within the confines of the first area.

REFERENCES:
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patent: 5243219 (1993-09-01), Katayama
patent: 5335009 (1994-10-01), Honda et al.
patent: 5376814 (1994-12-01), Lee
patent: 5404030 (1995-04-01), Kim et al.
patent: 5422499 (1995-06-01), Manning
patent: 5430328 (1995-07-01), Hsue

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