Process for plugging defects in a dielectric layer of a semicond

Details Process for plugging defects in a dielectric layer of a semicond Process for plugging defects in a dielectric layer of a semicond

1991-09-30

1993-05-04

Fourson, George

Fishing, trapping, and vermin destroying

148DIG25, 148DIG43, 148DIG118, 148DIG81, 437241, 437923, 437966, 437983, H01L 21443

Patent

active

052081893

ABSTRACT:
Defects in a thin dielectric layer of a semiconductor device are plugged by a discontinuous layer to maintain integrity of the dielectric without degrading the reliability of the device. In one form of the invention, a semiconductor device (10) includes an oxide layer (14) formed on a substrate material (12). Growth of a nitride layer (18), using CVD techniques, is initiated in any defects (16) in the oxide layer, but growth is terminated prior to entering a continuous growth stage. By plugging the defects with nitride without forming a continuous nitride layer, defect density in thin oxides is reduced without experiencing disadvantages associated with thick oxide-nitride stacks. The invention is also applicable to plugging defects in dielectric layers other than oxide. Furthermore, growth of a discontinuous layer may be achieved with a material other than a nitride using CVD techniques.

REFERENCES:
patent: 3988824 (1976-11-01), Bodway
patent: 4395438 (1983-07-01), Chiang
patent: 5057463 (1991-10-01), Bryant et al.
patent: 5107982 (1991-05-01), Kobayashi
"Scaling Limitation of Nitride Layer for Reliable Stacked Nitride/Oxide Gate Dielectrics," Bich-Yen Nguyen et al., Extended Abstracts, The Electrochemical Society, vol. 90-2, Abstract No. 315, Oct. 1990.

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