Process for diffusing boron into semiconductor wafers

Details Process for diffusing boron into semiconductor wafers Process for diffusing boron into semiconductor wafers

1992-03-17

1993-05-04

Fourson, George

Fishing, trapping, and vermin destroying

148DIG34, H01L 21223

Patent

active

052081850

ABSTRACT:
In a boron diffusion process, a multiplicity of semiconductor wafers and pyrolytic boron nitride dopant disks are placed in a diffusion tube kept in an inert atmosphere at a high temperature, and boron diffusion is performed with hydrogen injection, the initial concentration of hydrogen in the diffusion tube being a very low range of 0.05% by volume at maximum. The result is that it is possible to improve dispersion of sheet resistivity (.rho.s) of the silicon wafer surface remarkably and to suppress occurrence of lattice defects.

REFERENCES:
patent: 3205102 (1965-09-01), McCaldin
patent: 3530016 (1970-09-01), Joseph
patent: 3907618 (1975-09-01), Rapp
patent: 3928096 (1975-12-01), Vergano et al.
Wolf, S., et al., Silicon Processing for the UCSI Era, vol. 1, p. 266, 1986.
Ghandhi, S., VLSI Fabrication Principles, Silicon and Gallium Arsenide, p. 166, 1983.

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