Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

1991-11-26

1994-05-24

Wojciechowicz, Edward

Active solid-state devices (e.g., transistors, solid-state diode

Bipolar transistor structure

With specified electrode means

257378, 257382, 257384, 257740, 257768, 257773, 437141, 437162, 437192, 437203, H01L 2348, H01L 2122

Patent

active

053151500

ABSTRACT:
A semiconductor device including a MOS element having a buried contact structure. The buried contact structure includes a first contact diffused region formed by diffusion from a polycrystalline silicon layer and a second contact diffused region formed by diffusion deeper than the first contact diffused region, so that a parasitic resistance of the MOS element can be reduced. In a composite element composed of the MOS element and a bipolar element, partly since the first contact diffused region and an emitter diffused region of the bipolar element can be formed simultaneously, and partly since the depth of connection of the emitter diffused region, with the parasitic resistance of the MOS element being reduced, it is possible to realize a high-speed operation.

REFERENCES:
patent: 4433468 (1984-02-01), Kawamata
patent: 5045901 (1991-09-01), Komori et al.
patent: 5079607 (1992-01-01), Sakurai

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