Semiconductor memory device having self-correcting function

Excavating

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

371 214, 371 211, G06F 1110

Patent

active

051519062

ABSTRACT:
A semiconductor memory device having a self-correcting function comprises memory cells for storing data and memory cells for storing parity bit data. The criterion of detecting in the first read circuit is set smaller and the criterion of detecting in the second read circuit is set greater in value than the current value read in such a state that the electric charge in the memory cell becomes depleted. In this way, the first read circuit detects a current value smaller and the second read circuit detects a current value greater than the value of the current flowing through the memory cell holding the bit error because of charge depletion. Consequently, even if the variation of the threshold resulting from the charge depletion allows the presence of a faulty memory cell, one of the read circuits can make a correct data read.

REFERENCES:
patent: 4612630 (1986-09-01), Rosier
patent: 4779272 (1988-10-01), Kohda et al.
patent: 4901320 (1990-02-01), Sawada et al.
patent: 4967415 (1990-10-01), Tanagawa

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Semiconductor memory device having self-correcting function does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor memory device having self-correcting function, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor memory device having self-correcting function will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1974067

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.