Process for making low-leakage contacts

Details Process for making low-leakage contacts Process for making low-leakage contacts

1995-04-05

1997-02-25

Nguyen, Tuan H.

Fishing, trapping, and vermin destroying

437162, 437164, 437203, H01L 2144

Patent

active

056058624

ABSTRACT:
A semiconductor device having low-leakage borderless contacts is formed by etching contact openings adjacent first and second electronic elements of opposite dopant type, conformally depositing a thin doped polysilicon layer, protecting the electronic element of similar dopant-type, removing the thin doped polysilicon layer adjacent the oppositely doped electronic element, diffusing dopant from said polysilicon layer into a side wall of the electronic element of similar dopant-type, and then depositing tungsten within the contact openings.

REFERENCES:
patent: 3859127 (1975-01-01), Lehner
patent: 4086613 (1978-04-01), Biet
patent: 4433468 (1984-02-01), Kawamata
patent: 4666556 (1987-05-01), Fulton
patent: 4676847 (1987-06-01), Lin
patent: 4700465 (1987-10-01), Sirkin
patent: 4818723 (1989-04-01), Yen
patent: 4833516 (1989-05-01), Hwang
patent: 5202279 (1993-04-01), Chung
patent: 5244835 (1993-09-01), Hachiya
patent: 5252517 (1993-10-01), Blalock
Clarence W. Teng, Christopher Slawinski and William R. Hunter, Defect Generation in Trench Isolation, IEDM 84, pp. 586-589.

Affiliated with

Also associated with

Rating

Process for making low-leakage contacts does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Process for making low-leakage contacts, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process for making low-leakage contacts will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1973917