Method for making a low-noise bipolar transistor

Details Method for making a low-noise bipolar transistor Method for making a low-noise bipolar transistor

1995-06-06

1997-02-25

Nguyen, Tuan H.

Fishing, trapping, and vermin destroying

437 32, 437154, 437917, 148DIG10, H01L 21265

Patent

active

056058500

ABSTRACT:
A low-noise PNP transistor comprising a cutoff region laterally surrounding the emitter region in the surface portion of the transistor. The cutoff region has such a conductivity is to practically turn off the surface portion of the transistor, so that the transistor operates mainly in the bulk portion. The cutoff region is formed by an N.sup.+ -type enriched base region arranged between the emitter region and the collector region.

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patent: 3860460 (1975-01-01), Olson
patent: 3894891 (1975-07-01), Magdo et al.
patent: 4047217 (1977-09-01), McCaffrey et al.
patent: 4239558 (1980-12-01), Morishita et al.
patent: 4283236 (1981-08-01), Sirsi
patent: 4956305 (1990-09-01), Arndt

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