Process for fabricating a TFT by selectively oxidizing or nitrid

Details Process for fabricating a TFT by selectively oxidizing or nitrid Process for fabricating a TFT by selectively oxidizing or nitrid

1995-06-02

1997-02-25

Chaudhari, Chandra

Fishing, trapping, and vermin destroying

437 40, 437181, H01L 2184

Patent

active

056058470

ABSTRACT:
An electro-optical device such as a liquid crystal device comprises a transparent substrate and a plurality of thin film transistors for driving pixel electrodes. In order to prevent an undesirable influence of light incident on the thin film transistors, a light shielding layer is interposed between the thin film transistors and the transparent substrate. Another portion of the light-shielding layer which corresponds to the pixel electrodes, has been changed to transparent by selectively oxidizing or nitriding the layer.

REFERENCES:
patent: 5064775 (1991-11-01), Chang
patent: 5130264 (1992-07-01), Troxell et al.
patent: 5245201 (1993-09-01), Kozuka et al.
patent: 5352907 (1994-10-01), Matsuda et al.

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