Method for manufacturing semiconductor device

Details Method for manufacturing semiconductor device Method for manufacturing semiconductor device

1995-02-21

1997-02-25

Bowers, Jr., Charles L.

Fishing, trapping, and vermin destroying

437 40, 437233, 437174, 148DIG16, H01L 21268, H01L 2184

Patent

active

056058462

ABSTRACT:
A process for manufacturing a semiconductor device, particularly a thin film transistor, by using a crystalline silicon film having excellent characteristics. The process comprises forming a silicon nitride film and an amorphous silicon film in contact thereto, introducing a catalyst element capable of promoting the crystallization of the amorphous silicon film by heating the amorphous silicon film, thereby crystallizing at least a part of the amorphous silicon film, and accelerating the crystallization by irradiating the silicon film with a laser beam or intense light equivalent thereto.

REFERENCES:
patent: 3108914 (1963-10-01), Moerni
patent: 3791883 (1974-02-01), Takei et al.
patent: 4309224 (1982-01-01), Shibata
patent: 4502204 (1985-03-01), Topashi et al.
patent: 4851363 (1989-07-01), Troxell et al.
patent: 5075259 (1991-12-01), Moran
patent: 5108843 (1992-04-01), Ohtaka et al.
patent: 5147826 (1992-09-01), Liu et al.
patent: 5244836 (1993-09-01), Lim
patent: 5275851 (1994-01-01), Fonash et al.
patent: 5278093 (1994-01-01), Yonehara
patent: 5289030 (1994-02-01), Yamazagi et al.
patent: 5387530 (1995-02-01), Doyle et al.
patent: 5403772 (1995-04-01), Zhang et al.
patent: 5426064 (1995-06-01), Zhang et al.
C. Hayzelden et al., "In Situ Transmission Electron Microscopy Studies of Silicide-Mediated Crystallization of Amorphous Silicon" Appl. Phys. lett, 60, 2 (1992) 225.
A. V. Dvurechenskii et al., "Transport Phenomena in Amorphous Silicon Doped by Ion Implantation of 3rd Metals", Phys Stat. Sol. A95 (86) 635.
T. Hempel et al., "Needle-Like Crystallization of Ni Doped Amorphous Silicon Thin Films", Solid State Communications, vol. 85, No. 11, pp. 921-924, 1993.
Y. Kawazu, et al. Jin. J. Appl. Phys., 29, 12 (1990) 2698 "Low Temperature Crystallization . . . Nickel . . .".

Affiliated with

Also associated with

Rating

Method for manufacturing semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for manufacturing semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for manufacturing semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1973745