Image analysis – Applications – Manufacturing or product inspection
Patent
1998-03-24
2000-10-24
Mehta, Bhavesh
Image analysis
Applications
Manufacturing or product inspection
430 5, 430 30, G06K 900
Patent
active
061379018
ABSTRACT:
A plurality of photomask pattern data are received at a time so as to carry out, with respect to an entire region of each photomask, correction for the optical proximity effect in a photoresist. Also, from the entire region of each photomask, an underlayer correction range which requires being corrected with respect to the optical proximity effect due to a base structure of the photoresist is automatically extracted so as to correct the photoresist within only the underlayer correction range. Further, from the entire region of each photomask, a development correction range which requires being corrected with respect to receding of edges and pattern deformation of the photoresist generated during development is automatically extracted so as to correct the photoresist within only the development correction range with respect to the development of the photoresist. As a result, it is possible to accurately and rapidly correct a photomask pattern for forming of a photoresist pattern.
REFERENCES:
patent: 5682323 (1997-10-01), Pasch et al.
patent: 5867253 (1999-02-01), Nakae
Chabala, Jan M. et al., "Extension of Graybeam Writing . . . ", Photomask Technology and Management Technical Program, Session 1, Paper 3873-05, pp. 27-29.
ETEC Technical Symposium, Jul. 27&29, 1998, Kyoto, Japan, 14 pgs.
Cobb, N. et al., Large Area Phase-Shift Mask Design, SPIE Conference in San Jose, California, Feb. 1994, pp. 1-13.
Miyama, et al, "Large-Area Optical Proximity Correction with a Combination of Rule-Based and Simulation-Based Methods", Jpn. J. Appl. Phys., vol. 35, Pt. 1, No. 128, Dec. 1996, pp. 6370-6373.
Mehta Bhavesh
Sharp Kabushiki Kaisha
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