Semiconductor laser device

Details Semiconductor laser device Semiconductor laser device

1997-01-03

1998-05-26

Bovernick, Rodney B.

Coherent light generators

Particular active media

Semiconductor

372 45, H01S 319

Patent

active

057578354

ABSTRACT:
A semiconductor laser device includes a structure in which a first conductivity AlGaInP first cladding layer, an active layer, a second conductivity type AlGaInP second cladding layer, a second conductivity type AlGaInP intermediate layer, and a second conductivity type AlGaInP third cladding layer are successively epitaxially grown on a first conductivity type GaAs semiconductor substrate. The intermediate layer is within a profile of light produced in the active layer and includes AlGaInP layers having a band gap energy smaller than the band gap energy of the second cladding layer and the third cladding layer and larger than the band gap energy of the active layer. The intermediate layer has a multi-layer structure in which (Al.sub.x Ga.sub.1-x)InP layers (0.ltoreq.x.ltoreq.0.2) and (Al.sub.x Ga.sub.1-x)InP layers (0.5.ltoreq.x.ltoreq.1) are alternatingly laminated. By adding a small amount of Al to the intermediate layer, the band gap energy of the intermediate layer is broadened to control absorption of light emitted from the active layer and an increase in the threshold current of laser oscillation is suppressed. Since the intermediate layer has a multi-layer structure, a semiconductor laser device with sufficient etch stopping effect during etching of an off (100) substrate is realized.

REFERENCES:
patent: 5042045 (1991-08-01), Sato
patent: 5282218 (1994-01-01), Okajima et al.
patent: 5544185 (1996-08-01), Kadoiwa et al.
patent: 5559821 (1996-09-01), Yagi

Affiliated with

Also associated with

Rating

Semiconductor laser device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor laser device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor laser device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1972560