Vertical power MOSFET and process of fabricating the same

Details Vertical power MOSFET and process of fabricating the same Vertical power MOSFET and process of fabricating the same

1995-04-21

1996-11-26

Wilczewski, Mary

Fishing, trapping, and vermin destroying

437 40, 437 41, 437 67, H01L 21265, H01L 21302, H01L 21304, H01L 2176

Patent

active

055785085

ABSTRACT:
A channel region and a source region are formed on a surface of a substrate by double diffusion. A trench is formed so as to penetrate a part of the channel region and a part of the source region and reach the substrate. After an insulating film is formed on an inner wall of the trench, a polysilicon layer is buried up to an intermediate portion of the trench. In this state, channel ions are implanted in a side surface region of the trench, thereby depleting a channel region. Thereafter, a polysilicon layer for leading out a gate is buried in the trench.

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patent: 5047359 (1991-09-01), Nagatomo
patent: 5126807 (1992-06-01), Baba et al.
patent: 5168331 (1992-12-01), Yilmaz
patent: 5364810 (1994-11-01), Kosa et al.

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