Process for the production of a high voltage MIS integrated circ

Details Process for the production of a high voltage MIS integrated circ Process for the production of a high voltage MIS integrated circ

1992-02-12

1994-05-24

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 44, 437 46, 437189, 437190, 437200, H01L 21266

Patent

active

053148320

ABSTRACT:
A process for the production of a high voltage, MIS integrated circuit or a substrate incorporating double implantation MIS transistors creates transistors whose sources and drains consist of double junctions and whose gates are formed in a semiconducting layer. The initial process includes a first implantation of ions of a given conductivity type in the substrate and at a given dose, in order to form there the first source and drain junctions, followed by a second implantation of ions of the same type as the first, at a higher dose than that of the first implantation in order to form the double junctions. The process is characterized in that between the first and second implantations, a conductive layer is epitaxied on said first junctions and on the gates, the second implantation being formed through the epitaxied layer in such a way that the double junctions are partly formed there.

REFERENCES:
patent: 5079180 (1992-01-01), Rodder et al.
patent: 5168072 (1992-12-01), Moslehi

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