Gas sensor and manufacturing method of the same

Chemistry: electrical and wave energy – Apparatus – Electrolytic

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422 83, 422 94, 422 97, 422 98, 436153, 73 3105, 73 3106, 338 25, 338 34, 338308, 338314, 437 51, 437 60, 437184, 437187, G01N 2726

Patent

active

056056125

ABSTRACT:
A thin-film gas sensor and manufacturing method of the same is disclosed which includes a silicon substrate; an insulating layer formed on the surface of the silicon substrate; a heater formed in zigzag on the surface of said insulating layer; a temperature sensor formed in zigzag on the surface of the insulating layer in parallel with the heater; an interlayer insulating layer for electrically insulating the heater and temperature sensor formed on the insulating layer; a plurality of electrodes formed on the interlayer insulating layer placed between the heater and temperature sensor; a plurality of pairs of gas sensing layers disposed in an array on the electrodes and for reacting on detected gas; and a plurality of gas shielding layers formed on one gas sensing layer out of the pair of gas sensing layers and for shielding the detected gas so that the gas sensing layers do not react on the detected gas.

REFERENCES:
patent: 4225410 (1980-09-01), Pace
patent: 5003812 (1991-04-01), Yagawara et al.
patent: 5187084 (1993-02-01), Hallsby
patent: 5287752 (1994-02-01), Den Boer
patent: 5302935 (1994-04-01), Chatterjee
patent: 5345213 (1994-09-01), Semancik et al.

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