Nonvolatile semiconductor memory device with isolated gate elect

Details Nonvolatile semiconductor memory device with isolated gate elect Nonvolatile semiconductor memory device with isolated gate elect

1990-12-14

1992-09-29

Hille, Rolf

357 68, 357 71, H01L 2968, H01L 2348, H01L 2946

Patent

active

051517612

ABSTRACT:
A nonvolatile semiconductor memory device is disclosed, which includes a semiconductor substrate, a field oxidation film selectively formed on the semiconductor substrate, a first gate insulating film formed on an exposed surface of the semiconductor substrate and on the field oxidation film, a plurality of memory cells, floating gate electrodes and control gate electrodes of the plurality of memory cells, the floating gate and the control gate of each of the memory cells being isolated from those of other adjacent memory cells so as to be formed into an island, an insulating interlayer formed on the field oxidation film and on the control gate electrode, a contact hole extending through the first insulating interlayer so as to expose a portion of the control gate electrode, and a plurality of wires, formed on the insulating interlayer, for connecting the control gate electrodes of memory cells of the plurality of memory cells, which are adjacent to each other in a word line direction, through the first contact hole.

REFERENCES:
patent: 4543592 (1985-09-01), Itsumi et al.
patent: 4598460 (1990-07-01), Owens et al.
patent: 4935378 (1990-06-01), Mori
patent: 5023680 (1991-06-01), Gill et al.
Patent Abstracts of Japan, vol. 13, No. 97 (E-723)7 Mar. 1989 & JP-A-63 271 971 (Matsushita).

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