Magnetoresistive sensor with pinned SAL

Dynamic magnetic information storage or retrieval – Head – Magnetoresistive reproducing head

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360324, G11B 539

Patent

active

061376620

ABSTRACT:
A magnetoresistive sensor including a magnetoresistive (MR) sensing element, a nonmagnetic layer ("spacer") contacting the magnetoresistive sensing element; a first antiferromagnetic (AFM) layer contacting the nonmagnetic layer such that the nonmagnetic layer is sandwiched between the magnetoresistive sensing element and the antiferromagnetic layer; a ferromagnetic soft adjacent layer (SAL) contacting the antiferromagnetic layer such that the antiferromagnetic layer is sandwiched between the nonmagnetic layer and the soft adjacent layer; and a second antiferromagnetic layer contacting the SAL such that the SAL is sandwiched between the first and second antiferromagnetic layers. The two antiferromagnetic layers provide a stronger pinning effect. In one embodiment of the invention, the magnetoresistive sensing element is an anisotropic magnetoresistive (AMR) sensing element comprising a soft ferromagnetic layer. In another embodiment of the invention, the magnetoresistive sensing element is giant magnetoresistive (GMR) sensing element comprising a plurality of layers. The bias scheme can be non-symmetric, or may be symmetric around the magnetoresistive sensing element. An exchange biased bilayer (AFM/SAL) can have a multilayered structure such as AFM/SAL/AFM/SAL. . . . In this configuration, the SAL layer can be thin, so that a high exchange field with a high resistance can be obtained.

REFERENCES:
patent: 5492720 (1996-02-01), Gill et al.
patent: 5508866 (1996-04-01), Gill et al.
patent: 5705973 (1998-01-01), Yuan et al.
patent: 5715120 (1998-02-01), Gill
patent: 5923505 (1999-07-01), Kroes et al.
M. Uneno and S. Tanoue, "Properties of the Magnetoresistive Elements for NiFe/Cu Multilayers Using the SAL Biasing Method", J. of the Magnetics Society of Japan (in Japanese), vol. 19; pp. 401-404, (1995).

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