Programming which can make threshold voltages of programmed memo

Details Programming which can make threshold voltages of programmed memo Programming which can make threshold voltages of programmed memo

1997-06-03

1998-05-26

Le, Vu A.

Static information storage and retrieval

Floating gate

Particular biasing

36518522, 36518519, 36518503, G11C 700

Patent

active

057576998

ABSTRACT:
On programming a selected memory cell of a nonvolatile semiconductor memory, first programming (S11) of the selected memory cell is made by applying a first programming pulse to the selected memory cell to make the selected memory cell have a programmed threshold voltage (Vtm). First verification (S12) is made whether the selected memory cell has the programmed threshold voltage which is not greater than a first predetermined upper limit voltage (Vt1). When the selected memory cell has the programmed threshold voltage greater than the Vt1, the first programming is again made. When the selected memory cell has the programmed threshold voltage not greater than the Vt1, second verification (S13) is made whether the selected memory cell has the programmed threshold voltage which is not greater than a second predetermined upper limit voltage (Vt10) less than the Vt1. When the selected memory cell has the programmed threshold voltage greater than the Vt10, second programming (S13) of the selected memory cell by applying a second programming pulse different from the first programming pulse to the selected memory cell so as to make the selected memory cell have the programmed threshold voltage which is not greater than the Vt10. When the selected memory cell has the programmed threshold voltage not greater than the Vt10, programming of the selected memory cell is completed.

REFERENCES:
patent: 5608679 (1997-03-01), Mi et al.
patent: 5668759 (1997-09-01), Ohtsuki
T. Takeshima et al., "A 3.3 V. Single-Power-Supply 64Mb Flash Memory with Dynamic Bit-Line Latch (DBL) Porgramming Scheme", 1994 IEEE International Solid-State Circuits Conference, pp. 148 and 149 no month.
M. Ohkawa et al., "A 98mm.sup.2 3.3V 64Mb Flash memory with FN-NOR Type 4-level Cell", 1996 IEEE International Solid-State Circuits Conference, pp. 36 and 37 no month.

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