Crystallization from high temperature solutions of Si in copper

Details Crystallization from high temperature solutions of Si in copper Crystallization from high temperature solutions of Si in copper

1992-05-13

1994-05-24

Kunemund, Robert

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Liquid phase epitaxial growth

117 64, 117934, C30B 904

Patent

active

053145712

ABSTRACT:
A liquid phase epitaxy method for forming thin crystalline layers of device quality silicon having less than 5X10.sup.16 Cu atoms/cc impurity, comprising: preparing a saturated liquid solution melt of Si in Cu at about 16% to about 90% wt. Si at a temperature range of about 800.degree. C. to about 1400.degree. C. in an inert gas; immersing a substrate in the saturated solution melt; supersaturating the solution by lowering the temperature of the saturated solution melt and holding the substrate immersed in the solution melt for a period of time sufficient to cause growing Si to precipitate out of the solution to form a crystalline layer of Si on the substrate; and withdrawing the substrate from the solution.

REFERENCES:
patent: 2990372 (1961-06-01), Pinter et al.
patent: 4088514 (1978-05-01), Hara et al.
patent: 4201623 (1980-05-01), Sumner
patent: 4312848 (1982-01-01), Dawless
patent: 4447289 (1984-05-01), Geissler et al.
patent: 4822585 (1989-04-01), Dawless

Affiliated with

Also associated with

Rating

Crystallization from high temperature solutions of Si in copper does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Crystallization from high temperature solutions of Si in copper, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Crystallization from high temperature solutions of Si in copper will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1970663