Method of manufacturing a CMOS semiconductor device

Details Method of manufacturing a CMOS semiconductor device Method of manufacturing a CMOS semiconductor device

1993-07-23

1995-11-07

Fourson, George

Fishing, trapping, and vermin destroying

437 29, 437 34, 437 46, H01L 2176

Patent

active

054647894

ABSTRACT:
An improved method of manufacturing a semiconductor device, especially suitable for a p-channel MOS transistor is disclosed. The method includes the steps of forming a gate oxide film over the surface of a semiconductor substrate in a region where a p-channel MOS transistor is to be formed, forming a polysilicon film over the gate oxide film, in order to construct a gate electrode, forming a film of an amorphous material over the polysilicon film and implanting ions of a p-type impurity, especially elemental boron atoms, into the polysilicon film, through the film of amorphous material.

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