Semiconductor pressure sensor

Details Semiconductor pressure sensor Semiconductor pressure sensor

1991-09-20

1993-05-04

Woodiel, Donald O.

Measuring and testing

Fluid pressure gauge

Diaphragm

296711, 73706, 73721, 128675, 338 4, G01L 708, G01L 906

Patent

active

052071022

ABSTRACT:
A semiconductor pressure sensor is manufactured by integrally encapsulating a semiconductor pressure, sensor chip, a pedestal, leads, wires and a die pad in an outer package except for the surface of a diaphragm of the semiconductor pressure sensor chip and the reverse side of the die pad. The ratio of the thickness of the pedestal to the thickness of the semiconductor pressure sensor chip is 7.5 or less, while the ratio of the diameter of an opening formed in the outer package at the surface of the diaphragm and the diameter of the diaphragm is 1 or more. The thermal stress generated in the semiconductor pressure sensor chip can freely be reduced to a desired value, and a semiconductor pressure sensor exhibiting a desired accuracy can therefore be obtained. Furthermore, since the semiconductor pressure sensor can be manufactured by an ordinary IC manufacturing process, a semiconductor pressure sensor with reduced cost and having high quality can be produced.

REFERENCES:
patent: 4655088 (1987-04-01), Adams
patent: 4658651 (1987-04-01), Le
patent: 4691575 (1987-09-01), Sonderegger et al.
patent: 4838089 (1989-06-01), Okada et al.

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