Semiconductor device with multi-layer wiring

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum

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257412, 257750, 257751, 257752, 257763, H01L 2348

Patent

active

061371750

ABSTRACT:
A conductive layer (Ti, TiN, TiON, TiW, or a laminate thereof) having an antireflection function is formed on a gate electrode layer. The conductive layer is patterned by using a resist mask which is then removed. By using the patterened conductive layer as a mask, the gate electrode layer is patterned. An interlevel insulating film such as silicon oxide is deposited on the patterned gate electrode. A conductive layer having an antireflection function and a resist layer are formed on the interlevel insulating film. The resist layer is pattered, and the conductive layer is patterned by using the patterned resist layer as a mask. The patterned resist layer is removed. By using the patterned conductive layer as a mask, the interlevel insulating film is selectively etched to form a contact hole. A main conductive layer such as Al and a conductive layer having an antireflection function are formed and similar patterning is repeated.

REFERENCES:
patent: 5160407 (1992-11-01), Latchford et al.
patent: 5207868 (1993-05-01), Shinohara
patent: 5286344 (1994-02-01), Blalock et al.
patent: 5298463 (1994-03-01), Sandhu et al.
patent: 5302538 (1994-04-01), Ishikawa
patent: 5326431 (1994-07-01), Kadomura
patent: 5378653 (1995-01-01), Yanagida
patent: 5403781 (1995-04-01), Matsumoto
patent: 5427666 (1995-06-01), Mueller et al.
patent: 5487811 (1996-01-01), Iizuki
patent: 5494697 (1996-02-01), Blayo et al.
patent: 5578163 (1996-11-01), Yachi
patent: 5883433 (1999-03-01), Oda
S. Wolf, "Silicon Processing for the VLSI Era" 1986, La Hice Press, pp. 547-550, 555, 557, 558, 581.
P.E. Riley, et al., "Plasma Etching of Aluminum for ULSI Circuits", Solid State Technology, Feb. 1993, pp. 47-48, 51-53.
J.-S. Maa, et al., "Anisotropic Etching of Polysilicon in a Single-Wafer Aluminum Etch Reactor", J. Vac. Sci. Technol. B9 (3), May/Jun. 1991, pp. 1596-1597.
A. Nagy, "Vertical Oxide Etching Without Inducing Change in Critical Dimensions", Optical Engineering, vol. 31, No. 2, Feb. 1992, pp. 335-340.
M. Sato, et al., "Suppression of Microloading Effect by Low-Temperature, SiO.sub.2 Etching", Jpn. J. Appl. Phys., vol. 31, 1992, pp. 4370-4375.

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