Latch-up controllable insulated gate bipolar transistor

Details Latch-up controllable insulated gate bipolar transistor Latch-up controllable insulated gate bipolar transistor

1999-12-02

2000-10-24

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

Five or more layer unidirectional structure

257133, 257137, 257138, 257330, 257331, 257332, 257378, H01L 2974, H01L 31111, H01L 2976, H01L 2994, H01L 31062

Patent

active

06137122&

ABSTRACT:
A latch-up controllable insulated gate bipolar transistor is formed with a thyristor structure, which has a first region of a first conductivity type, a second region of a second conductivity type formed on the first region, a third region of the first conductivity type formed on the second region, and a fourth region of the second conductivity type contacting the third region and forming a P-N junction therewith. The first and third regions contact a first and second electrode regions respectively. A first field effect transistor means for controlling conduction between the fourth region and the second region in response to an actuation bias; and a second field effect transistor means between the fourth region and the second electrode region for turning the thyristor off in response to a cutoff bias. The insulated gate bipolar transistor of the present invention are latch-up controllable, of a high voltage withstand and of a lower forward voltage drop simultaneously

REFERENCES:
patent: 5689121 (1997-11-01), Kitagawa et al.
patent: 5861638 (1999-01-01), Oh

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