Photodiode having enhanced long wavelength response

Details Photodiode having enhanced long wavelength response Photodiode having enhanced long wavelength response

1979-07-16

1981-07-07

Edlow, Martin H.

357 13, 357 55, 357 58, H01L 2714, H01L 2912

Patent

active

042777933

ABSTRACT:
The light entry surface or back surface of an avalanche or p-i-n photodiode is contoured in a regular array of indentations which are hemispherical or almost hemispherical in shape. Light incident on the photodiode undergoes multiple interactions with the contoured surface, thus reducing the entry surface reflectivity and increasing the optical path length in the photodiode, and thereby enhancing its long wavelength response.

REFERENCES:
patent: 4011016 (1977-03-01), Layne
patent: 4046594 (1977-09-01), Tarui
patent: 4072541 (1978-02-01), Meulenberg, Jr.
patent: 4135950 (1979-01-01), Rittner

Affiliated with

Also associated with

Rating

Photodiode having enhanced long wavelength response does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Photodiode having enhanced long wavelength response, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Photodiode having enhanced long wavelength response will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-196580