Piggyback readout stratified channel CCD

Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons

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Details

307221D, 357 30, H01L 2978, G11C 1928, H01L 2714, H01L 3100

Patent

active

042777925

ABSTRACT:
A piggyback readout stratified channel CCD includes, in a semiconductor substrate, a charge transfer channel, a barrier region lying under and adjacent to the charge transfer channel, and a charge integration channel lying under and adjacent to the barrier region. The semiconductor substrate and barrier region have dopant atoms of a first type; while the charge transfer channel and charge integration channel have dopant atoms of a second type opposite to the first type. An insulating layer overlies the charge transfer channel; and a plurality of phase electrodes are serially disposed thereon. In operation, charge transfers from the charge integration channel to the charge transfer channel, and charge packets propagate simultaneously along both the charge transfer channel and the charge integration channel in a piggyback fashion.

REFERENCES:
patent: 3739240 (1973-06-01), Krambeck
patent: 3852799 (1974-12-01), Walden
patent: 3852801 (1974-12-01), Itoh et al.
patent: 3864722 (1975-02-01), Carnes
patent: 4032952 (1977-06-01), Ohba et al.

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