Collector up heterojunction bipolar transistor

Details Collector up heterojunction bipolar transistor Collector up heterojunction bipolar transistor

1997-01-28

1998-05-26

Jackson, Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Bipolar transistor

257191, 257197, H01L 29737

Patent

active

057570396

ABSTRACT:
A process and structure for an improved collector-up bipolar transistor. The base is formed after the emitter is implanted to eliminate base damage during oxygen implantation typical in prior art collector-up bipolar transistors. In a preferred embodiment, an emitter layer of GaAlAs is implanted with oxygen in the extrinsic emitter region to damage the material and make it insulative. The base is epitaxially grown at low temperature to insure the emitter material remains damaged and insulative.

REFERENCES:
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patent: 5296389 (1994-03-01), Shimawaki
patent: 5389798 (1995-02-01), Ochi et al.
P. M. Asbeck, et al., "(Ga,Al)As/GaAs Bipolar Transistors for Digital Integrated Circuits," IEEE International Electron Device Meeting (IEDM), Dec. 1981, pp. 629-632.
P. M. Asbeck, et al., "4.5GHz Frequency Dividers using GaAs/(GaAl) as Heterojunction Bipolar Transistors," 1984 IEEE International Solid-State Circuits Conference, pp. 50-51.
S. Luryi, "How to make an Ideal HBT and Sell It Too," IEEE Transactins on Electron Devices, vol. 41, No. 12, Dec. 1994, pp. 2241-2246.
S. Yamahata, et al., "High-fmax Collector-Up AlGaAs/GaAs Heterojunction Bipolar Transistors with a Heavily Carbon-Doped Base Fabricated Using Oxygen-Ion Implanation," IEEE Electron Device Letters, vol. 14, No. 4, Apr. 1993, pp. 173-175.

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