Polishing composition including an inhibitor of tungsten etching

Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means

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438693, 216 88, 216 89, 216 90, H01L 2100

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active

061367117

ABSTRACT:
A chemical mechanical polishing composition comprising a composition capable of etching tungsten and at least one inhibitor of tungsten etching and methods for using the composition to polish tungsten containing substrates.

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