Process for fabricating an X-ray absorbing mask

Details Process for fabricating an X-ray absorbing mask Process for fabricating an X-ray absorbing mask

1994-08-01

1995-11-07

Rosasco, S.

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

430311, 430313, 430330, 378 34, 378 35, G03F 900

Patent

active

054647118

ABSTRACT:
A process for the fabrication of an X-ray absorbing mask includes providing a silicon substrate (10) having a front surface (16) and a back surface (18). A membrane layer (12) is formed on the front surface (16). In one embodiment of the invention, an etch stop layer (14) and an X-ray absorbing layer (20) are sequentially formed over the membrane layer (12). In a preferred embodiment, the X-ray absorbing layer (20) is tantalum silicon nitride deposited by RF sputter deposition directly onto the layers overlying the silicon substrate (10). The structure is then annealed at a temperature sufficient to reduce the internal stress in the X-ray absorbing layer (20). Finally, the X-ray absorbing layer is patterned to form a masking pattern (30, 36) on the membrane layer (12).

REFERENCES:
patent: 4957834 (1990-09-01), Matsuda et al.
patent: 4971851 (1990-11-01), Neukermans et al.
patent: 5188706 (1993-02-01), Hori et al.
T. Inoue, et al., Pattern formation in amorphous WNx by low temperature electron cyclotron resonance etching for fabrication of x-ray mask, J.Vac.Sci. Technol.B 11(6), Nov./Dec. 1993.
T. Inoue, et al., Pattern formation in amorphous WNx by low temperature electron cyclotron resonance etching for fabrication of x-ray mask, 37th Int. Symp. Elect. Ion Photon Beams, Jun. 1-4, '93.
R. R. Kola, Mask Metallization,5th ARPA Adv. Lith. Program Review, Fort Meyers, Fla., 24 Jan. 1994.

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