Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal
Patent
1998-03-25
2000-10-24
Mulpuri, Savitri
Semiconductor device manufacturing: process
Making device or circuit responsive to nonelectrical signal
438 57, 438526, H01L 21265
Patent
active
061366285
ABSTRACT:
It has been pointed out that the avalanche breakdown voltage of a photodetector comprising an avalanche layer formed by selective epitaxial growth considerably fluctuates. A N.sup.+ --Si buried layer and a N--Si epitaxial layer 3 are successively formed on a P--Si substrate. A cavity is formed in the N--Si epitaxial layer, and a SiO.sub.2 layer is grown in the empty space of the cavity. Then, the SiO.sub.2 layer is etched by dry etching, and a SiO.sub.2 layer is left behind on the side wall of the cavity. Next, a P--Si diffusion layer (an avalanche layer) is formed on the N.sup.+ --Si buried layer by P ion implantation. Subsequently, A SiGe/Si layer (an absorption layer) is selectively grown, and a P.sup.+ --Si layer (an electrode layer) is selectively grown thereon.
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Mulpuri Savitri
NEC Corporation
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