Two stage RF amplifier

Details Two stage RF amplifier Two stage RF amplifier

1979-12-05

1981-07-07

Mullins, James B.

Amplifiers

With semiconductor amplifying device

Including combined diverse-type semiconductor device

330285, 330311, H03F 316, F03F 3193

Patent

active

042777577

ABSTRACT:
A radio frequency amplifier includes a first stage cascode combination of a JFET and a bipolar transistor with a second stage bipolar transistor coupled to the first stage bipolar transistor through a tuned circuit. An AGC voltage is applied to the base of the second stage bipolar transistor, the emitter of which is connected in series with the base of the first stage bipolar transistor. The second stage bipolar transistor thus acts both as a second stage RF amplifier and an AGC signal amplifier for the first stage.

REFERENCES:
patent: 3177439 (1965-04-01), Tulp
patent: 3510579 (1970-05-01), Marsh
Texas Instruments Application Report "AGC Characteristics of FET Amplifiers" p. 7, Figure 11.

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