Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask
Patent
1998-08-21
2000-10-24
Young, Christopher G.
Radiation imagery chemistry: process, composition, or product th
Radiation modifying product or process of making
Radiation mask
430 30, 430313, G03F 900
Patent
active
061364789
ABSTRACT:
With a mask pattern correction method, a mask correction rule is prepared by taking the correlation of the dimensional variation in the wafer and the amount of correction so that identical devices may be manufactured by a plurality of different manufacturing apparatus. Finished wafers are electrically measured for the dimensional variation of the pattern and the dependency on the distance to the nearest neighbor with an ACLV after the entire process to determine the dimensional variation per edge of the pattern on the wafer. A correction factor is determined from the correlation of the designed dimensions and the actual dimensions of the finished products under constant pattern pitch condition. Then, the dependencies on the distance to the nearest neighbor are made to agree with each other and the dimensional variation per edge is divided by the correction factor. The obtained result is sorted by the minimum grid with of the mask writing system to determine the x-coordinate of each of the points on the grid of the mask writing system. Then, the correction region for 1 grid, the correction region for 2 grids and so on are determined on the basis of the x-coordinate values.
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Liebmann et al.; "Optical Proximity Correction, a First Look at Manufacturability" SPIE, vol. 2322, Photomask Technology and Management (1994), pp. 229-237.
Hashimoto Koji
Usui Satoshi
Kabushiki Kaisha Toshiba
Young Christopher G.
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